Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
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Bester Preis: € 66,86 (vom 01.10.2017)1
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
~EN NW EB DLISBN: 9783319666075 bzw. 331966607X, vermutlich in Englisch, Springer International Publishing, neu, E-Book, elektronischer Download.
Lieferung aus: Deutschland, Versandkostenfrei.
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets: This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint. Englisch, Ebook.
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets: This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint. Englisch, Ebook.
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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
~EN PB NWISBN: 9783319666075 bzw. 331966607X, vermutlich in Englisch, Springer-Verlag GmbH, Taschenbuch, neu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
3
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets (2017)
EN NW EB DLISBN: 9783319666075 bzw. 331966607X, in Englisch, Springer, Springer, Springer, neu, E-Book, elektronischer Download.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, in-stock.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
4
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
~EN NW EB DLISBN: 9783319666075 bzw. 331966607X, vermutlich in Englisch, neu, E-Book, elektronischer Download.
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets ab 103.49 EURO.
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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
DE NW EBISBN: 9783319666075 bzw. 331966607X, in Deutsch, Springer Science+Business Media, neu, E-Book.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Lagernd.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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