NTUAA-DC 40th Anniversary Collection (1973-2013) - 7 Angebote vergleichen
Bester Preis: € 10,90 (vom 07.05.2017)1
III-Nitride Devices and Nanoengineering
EN NWISBN: 9781848162235 bzw. 1848162235, in Englisch, Imperial College Press, neu.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, in-stock.
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field. Contents: High Pressure Bulk Crystal Growth of (Ga, Al)N (P Geiser et al.); Fabrication of GaN Light Emitting Diodes by Laser-Off Technique (C-F Chu et al.); High-Resolution Electron Microscopy Observations of GaN-based Laser Diodes (M Shiojiri); Growth and Development of III-Nitride Photodetectors (U Chowdhury et al.); Laser Diodes Grown on Bulk GaN Substrate (P Perlin et al.); III-Nitride Lighting Emitting Diodes on Si (N C Chen et al.); III-Nitride Light-Emitting Devices on Patterned Sapphire Substrates (D S Wuu et al.); Recent Trends in Indium Nitride Nano-Materials (A Ganguly et al.); and other papers.
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field. Contents: High Pressure Bulk Crystal Growth of (Ga, Al)N (P Geiser et al.); Fabrication of GaN Light Emitting Diodes by Laser-Off Technique (C-F Chu et al.); High-Resolution Electron Microscopy Observations of GaN-based Laser Diodes (M Shiojiri); Growth and Development of III-Nitride Photodetectors (U Chowdhury et al.); Laser Diodes Grown on Bulk GaN Substrate (P Perlin et al.); III-Nitride Lighting Emitting Diodes on Si (N C Chen et al.); III-Nitride Light-Emitting Devices on Patterned Sapphire Substrates (D S Wuu et al.); Recent Trends in Indium Nitride Nano-Materials (A Ganguly et al.); and other papers.
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III-Nitride Devices and Nanoengineering
EN NW EBISBN: 9781848162235 bzw. 1848162235, in Englisch, World Scientific Publishing Company, neu, E-Book.
Lieferung aus: Vereinigte Staaten von Amerika, Ebook for download.
Technology, Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field. eBook.
Technology, Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field. eBook.
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Ntuaa-DC 40th Anniversary Collection (1973-2013)
EN PB NWISBN: 9781625030924 bzw. 1625030924, in Englisch, Taschenbuch, neu.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, in-stock.
Ntuaa-DC 40th Anniversary Collection (1973-2013) : Paperback: Ehgbooks: 9781625030924: 01 Jan 2014.
Ntuaa-DC 40th Anniversary Collection (1973-2013) : Paperback: Ehgbooks: 9781625030924: 01 Jan 2014.
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NTUAA-DC 40th Anniversary Collection (1973-2013)
EN PB NWISBN: 9781625030924 bzw. 1625030924, in Englisch, EHGBooks, Taschenbuch, neu.
Lieferung aus: Vereinigte Staaten von Amerika, In Stock.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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