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100%: Springer: Charge-Trapping Non-Volatile Memories: Volume 2-Emerging Materials and Structures Panagiotis Dimitrakis Editor (ISBN: 9783319487038) 2017, in Englisch, Band: 2, Broschiert.Nur diese Ausgabe anzeigen…
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Charge-Trapping Non-Volatile Memories: Volume 2-Emerging Materials and Structures Panagiotis Dimitrakis Editor
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Bester Preis: € 75,99 (vom 01.11.2016)1
Charge-Trapping Non-Volatile Memories
~EN HC NWISBN: 9783319487038 bzw. 3319487035, vermutlich in Englisch, Springer Shop, gebundenes Buch, neu.
Lieferung aus: Japan, Lagernd, zzgl. Versandkosten.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks. Hard cover.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks. Hard cover.
2
Charge-Trapping Non-Volatile Memories: Volume 2-Emerging Materials and Structures Panagiotis Dimitrakis Editor
~EN HC NWISBN: 9783319487038 bzw. 3319487035, Band: 2, vermutlich in Englisch, Springer International Publishing, gebundenes Buch, neu.
Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;Details new architectures and current modeling concepts for non-volatile memory devices;Focuses on conduction through multi-layer gate dielectrics stacks.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;Details new architectures and current modeling concepts for non-volatile memory devices;Focuses on conduction through multi-layer gate dielectrics stacks.
3
| Charge-Trapping Non-Volatile Memories | Springer | 1st ed. 2017 | 2017
~EN NWISBN: 9783319487038 bzw. 3319487035, vermutlich in Englisch, Springer, neu.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. - Provides a comprehensive overview of the technology for charge-trapping non-volatile memories, - Details new architectures and current modeling concepts for non-volatile memory devices, - Focuses on conduction through multi-layer gate dielectrics stacks.
4
Charge-Trapping Non-Volatile Memories
~EN NWISBN: 9783319487038 bzw. 3319487035, vermutlich in Englisch, neu.
Lieferung aus: Österreich, Lieferzeit: 11 Tage, zzgl. Versandkosten.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories,Details new architectures and current modeling concepts for non-volatile memory devices,Focuses on conduction through multi-layer gate dielectrics stacks.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories,Details new architectures and current modeling concepts for non-volatile memory devices,Focuses on conduction through multi-layer gate dielectrics stacks.
5
Charge-Trapping Non-Volatile Memories
DE NWISBN: 9783319487038 bzw. 3319487035, in Deutsch, Springer, neu.
Lieferung aus: Deutschland, Bücher und alle Bestellungen die ein Buch enthalten sind versandkostenfrei, sonstige Bestellungen innerhalb Deutschland EUR 3,-, ab EUR 20,- kostenlos, Erscheint demnächst (Neuerscheinung).
Emerging Materials and Structures, This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Emerging Materials and Structures, This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
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