Controlled aggregation of Fe into GaN - 6 Angebote vergleichen
Bester Preis: € 28,99 (vom 01.07.2017)1
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Controlled aggregation of Fe into GaN : Towards a room-temperature magnetic semiconductor (2017)
DE PB NW
ISBN: 9783330327450 bzw. 3330327456, in Deutsch, LAP Lambert Academic Publishing Jun 2017, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
Neuware - The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside the semiconductor matrix to elucidate the origin of their magnetic signatures and hereby achieve a reliable functionality of these systems. In this work, we report on the growth by metalorganic vapor phase epitaxy of (Ga,Fe)N with special focus on the incorporation of Fe ions as a function of the growth parameters. We show that it is possible to a ect the aggregation of Fe ions in GaN by growth rate and growth temperature, by d-doping, and by co-doping with acceptors and donors. Our results contribute to the understanding of longstanding unexplained issues in the field of magnetic semiconductors. 92 pp. Englisch.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
Neuware - The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside the semiconductor matrix to elucidate the origin of their magnetic signatures and hereby achieve a reliable functionality of these systems. In this work, we report on the growth by metalorganic vapor phase epitaxy of (Ga,Fe)N with special focus on the incorporation of Fe ions as a function of the growth parameters. We show that it is possible to a ect the aggregation of Fe ions in GaN by growth rate and growth temperature, by d-doping, and by co-doping with acceptors and donors. Our results contribute to the understanding of longstanding unexplained issues in the field of magnetic semiconductors. 92 pp. Englisch.
2
Symbolbild
Controlled aggregation of Fe into GaN
DE PB NW
ISBN: 9783330327450 bzw. 3330327456, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Agrios-Buch [57449362], Bergisch Gladbach, Germany.
Neuware - The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside the semiconductor matrix to elucidate the origin of their magnetic signatures and hereby achieve a reliable functionality of these systems. In this work, we report on the growth by metalorganic vapor phase epitaxy of (Ga,Fe)N with special focus on the incorporation of Fe ions as a function of the growth parameters. We show that it is possible to a ect the aggregation of Fe ions in GaN by growth rate and growth temperature, by d-doping, and by co-doping with acceptors and donors. Our results contribute to the understanding of longstanding unexplained issues in the field of magnetic semiconductors. 92 pp. Englisch.
Von Händler/Antiquariat, Agrios-Buch [57449362], Bergisch Gladbach, Germany.
Neuware - The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside the semiconductor matrix to elucidate the origin of their magnetic signatures and hereby achieve a reliable functionality of these systems. In this work, we report on the growth by metalorganic vapor phase epitaxy of (Ga,Fe)N with special focus on the incorporation of Fe ions as a function of the growth parameters. We show that it is possible to a ect the aggregation of Fe ions in GaN by growth rate and growth temperature, by d-doping, and by co-doping with acceptors and donors. Our results contribute to the understanding of longstanding unexplained issues in the field of magnetic semiconductors. 92 pp. Englisch.
3
Controlled aggregation of Fe into GaN
DE NW
ISBN: 9783330327450 bzw. 3330327456, in Deutsch, neu.
Lieferung aus: Deutschland, Lieferzeit: 7 Tage.
The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside the semiconductor matrix to elucidate the origin of their magnetic signatures and hereby achieve a reliable functionality of these systems. In this work, we report on the growth by metalorganic vapor phase epitaxy of (Ga,Fe)N with special focus on the incorporation of Fe ions as a function of the growth parameters. We show that it is possible to a ect the aggregation of Fe ions in GaN by growth rate and growth temperature, by d-doping, and by co-doping with acceptors and donors. Our results contribute to the understanding of longstanding unexplained issues in the field of magnetic semiconductors.
The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside the semiconductor matrix to elucidate the origin of their magnetic signatures and hereby achieve a reliable functionality of these systems. In this work, we report on the growth by metalorganic vapor phase epitaxy of (Ga,Fe)N with special focus on the incorporation of Fe ions as a function of the growth parameters. We show that it is possible to a ect the aggregation of Fe ions in GaN by growth rate and growth temperature, by d-doping, and by co-doping with acceptors and donors. Our results contribute to the understanding of longstanding unexplained issues in the field of magnetic semiconductors.
4
Controlled aggregation of Fe into GaN
DE HC NW
ISBN: 9783330327450 bzw. 3330327456, in Deutsch, Lap Lambert Academic Publishing, gebundenes Buch, neu.
Lieferung aus: Deutschland, Versandkostenfrei innerhalb von Deutschland.
The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside the semiconductor matrix to elucidate the origin of their magnetic signatures and hereby achieve a reliable functionality of these systems. In this work, we report on the growth by metalorganic vapor phase epitaxy of (Ga,Fe)N with special focus on the incorporation of Fe ions as a function of the growth parameters. We show that it is possible to a ect the aggregation of Fe ions in GaN by growth rate and growth temperature, by d-doping, and by co-doping with acceptors and donors. Our results contribute to the understanding of longstanding unexplained issues in the field of magnetic semiconductors. Lieferzeit 1-2 Werktage.
The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside the semiconductor matrix to elucidate the origin of their magnetic signatures and hereby achieve a reliable functionality of these systems. In this work, we report on the growth by metalorganic vapor phase epitaxy of (Ga,Fe)N with special focus on the incorporation of Fe ions as a function of the growth parameters. We show that it is possible to a ect the aggregation of Fe ions in GaN by growth rate and growth temperature, by d-doping, and by co-doping with acceptors and donors. Our results contribute to the understanding of longstanding unexplained issues in the field of magnetic semiconductors. Lieferzeit 1-2 Werktage.
5
Controlled aggregation of Fe into GaN
~EN PB NW
ISBN: 9783330327450 bzw. 3330327456, vermutlich in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
6
Controlled aggregation of Fe into GaN: Towards a room-temperature magnetic semiconductor (2017)
EN PB NW
ISBN: 9783330327450 bzw. 3330327456, in Englisch, 92 Seiten, LAP LAMBERT Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei.
Von Händler/Antiquariat, dodax-shop-eu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, dodax-shop-eu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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