Silicon Carbide - 10 Angebote vergleichen

Lieferung aus: Vereinigte Staaten von Amerika, Usually ships in 6 to 10 days.
Von Händler/Antiquariat, Amazon.com.
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few. , Printed Access Code, Ausgabe: 1, Label: Wiley-VCH, Wiley-VCH, Produktgruppe: Book, Publiziert: 2011-03-28, Studio: Wiley-VCH.

Lieferung aus: Vereinigte Staaten von Amerika, Usually ships in 6 to 10 days.
Von Händler/Antiquariat, Amazon.com.
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. , Printed Access Code, Ausgabe: 1, Label: Wiley-VCH, Wiley-VCH, Produktgruppe: Book, Publiziert: 2011-03-28, Studio: Wiley-VCH.

Lieferung aus: Schweiz, Sofort per Download lieferbar.
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Lieferung aus: Deutschland, Sofort per Download lieferbar.
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Lieferung aus: Deutschland, zzgl. Versandkosten.
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Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Despatched same working day before 3pm.
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Lieferung aus: Schweiz, Bei Bestellungen innerhalb der Schweiz berechnen wir Fr. 3.50 Versandkosten. Die voraussichtliche Versanddauer liegt bei 1 bis 2 Werktagen. Sofort per Download lieferbar.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen

Silicon Carbide ab 160.99 EURO Volume 1: Growth, Defects, and Novel Applications.