Advanced Gate Stacks for High-Mobility Semiconductors
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| Preise | 2012 | 2013 | 2014 | 2015 | 2020 |
|---|---|---|---|---|---|
| Schnitt | € 146,06 | € 133,85 | € 130,55 | € 136,05 | € 182,99 |
| Nachfrage |
1
Advanced Gate Stacks for High-Mobility Semiconductors (2007)
~EN NWISBN: 9783540714903 bzw. 3540714901, vermutlich in Englisch, Springer, neu.
Lieferung aus: Deutschland, Sofort lieferbar.
Will nanoelectronic devices continue to scale according to Moore’s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator)? Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology? How do these materials and devices behave at the nanoscale? The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology. gebundene Ausgabe, 21.11.2007.
Will nanoelectronic devices continue to scale according to Moore’s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator)? Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology? How do these materials and devices behave at the nanoscale? The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology. gebundene Ausgabe, 21.11.2007.
2
Advanced Gate Stacks for High-Mobility Semiconductors (2007)
DE NWISBN: 9783540714903 bzw. 3540714901, in Deutsch, Springer-Verlag Gmbh Nov 2007, neu.
Von Händler/Antiquariat, sparbuchladen [52968077], Göttingen, NDS, Germany.
- Will nanoelectronic devices continue to scale according to Moore s law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology. 383 pp. Englisch.
- Will nanoelectronic devices continue to scale according to Moore s law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology. 383 pp. Englisch.
3
Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics)
DE HC NWISBN: 9783540714903 bzw. 3540714901, in Deutsch, Springer, gebundenes Buch, neu.
Von Händler/Antiquariat, Textbooks Den [59161808], Oakland, CA, U.S.A.
3540714901 New Book. Please allow 4-14 business days to arrive. We will ship Internationally as well. Very Good Customer Service is Guaranteed!! Millions sold offline.
3540714901 New Book. Please allow 4-14 business days to arrive. We will ship Internationally as well. Very Good Customer Service is Guaranteed!! Millions sold offline.
4
Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics)
DE HC NWISBN: 9783540714903 bzw. 3540714901, in Deutsch, Springer, gebundenes Buch, neu.
Von Händler/Antiquariat, BookSelectionOZ [61235538], Craigieburn, VIC, Australia.
3540714901 Brand New Book.We use aramex/dhl/usps for delivery.We don't ship to PO Box address.
3540714901 Brand New Book.We use aramex/dhl/usps for delivery.We don't ship to PO Box address.
5
Advanced Gate Stacks for High-Mobility Semiconductors (2007)
DE HC NWISBN: 9783540714903 bzw. 3540714901, in Deutsch, Springer Berlin Heidelberg, gebundenes Buch, neu.
Lieferung aus: Deutschland, Versandkostenfrei, Shipping in 7 days.
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Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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