Einstein Relation in Compound Semiconductors and their Nanostructures
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| Schnitt | € 160,57 | € 179,55 | € 190,02 | € 196,16 | € 161,47 |
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Einstein Relation in Compound Semiconductors and their Nanostructures (2008)
~EN NW EBISBN: 9783540795575 bzw. 354079557X, vermutlich in Englisch, Springer, neu, E-Book.
Lieferung aus: Deutschland, Sofort per Download lieferbar.
This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. TOC:1. Basics of the Einstein Relation.- 2. The Einstein Relation in Bulk Specimens of Compound Semiconductors.- 3. The Einstein Relation in Compound Semiconductors Under Magentic Quantization.- 4. The Einstein Relation in Compound Semiconductors Under Cross-Field Configuration.- 5. The Einstein Relation in Compound Semiconductors Under Size Quantization.- 6 The Einstein Relation in Quantum Wires of Compound Semiconductors.- 7 The Einstein Relation in Inversion Layers of Compound Semiconductors.- 8 The Einstein Relation in nipi Structures of Compound Semiconductors.- 9. The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Fields.- 10. The Einstein Relation in Compound Semiconductors in the Presence of Light Waves.- 11. The Einstein Relation in Heavily Doped Compound Semiconductors.- 12. Conclusion and Future Research. PDF, 16.11.2008.
This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. TOC:1. Basics of the Einstein Relation.- 2. The Einstein Relation in Bulk Specimens of Compound Semiconductors.- 3. The Einstein Relation in Compound Semiconductors Under Magentic Quantization.- 4. The Einstein Relation in Compound Semiconductors Under Cross-Field Configuration.- 5. The Einstein Relation in Compound Semiconductors Under Size Quantization.- 6 The Einstein Relation in Quantum Wires of Compound Semiconductors.- 7 The Einstein Relation in Inversion Layers of Compound Semiconductors.- 8 The Einstein Relation in nipi Structures of Compound Semiconductors.- 9. The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Fields.- 10. The Einstein Relation in Compound Semiconductors in the Presence of Light Waves.- 11. The Einstein Relation in Heavily Doped Compound Semiconductors.- 12. Conclusion and Future Research. PDF, 16.11.2008.
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Einstein Relation in Compound Semiconductors and Their Nanostructures
~EN NW EB DLISBN: 9783540795575 bzw. 354079557X, vermutlich in Englisch, Springer Shop, neu, E-Book, elektronischer Download.
Lieferung aus: Deutschland, Lagernd.
This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. eBook.
This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. eBook.
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Einstein Relation in Compound Semiconductors and Their Nanostructures
DE NW EB DLISBN: 9783540795575 bzw. 354079557X, in Deutsch, Springer Berlin, neu, E-Book, elektronischer Download.
Lieferung aus: Deutschland, Versandkostenfrei.
Einstein Relation in Compound Semiconductors and Their Nanostructures: In recent years, with the advent of ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con nement in one, two and three dimensions (such as inversion layers, ultrathin lms, nipis, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con ned structures aided by various other elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting applications in the realm of quantum e ect devices. In ultrathin lms, due to the reduction of symmetry in the wavevector space, the motion of the carriers in the direction normal to the lm becomes quantized leading to the quantum size e ect. Such systems nd extensive applications in quantum well lasers, eld e ect transistors, high speed digital networks and also in other low dimensional systems. In quantum wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed. The transport properties of charge carriers in quantum wires, which may be studied by utilizing the similarities with optical and microwave waveguides, are currently being investigated. Knowledge regarding these quantized structures may be gained from original research contributions in scienti c journals, proceedings of international conferences and various - view articles. Englisch, Ebook.
Einstein Relation in Compound Semiconductors and Their Nanostructures: In recent years, with the advent of ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con nement in one, two and three dimensions (such as inversion layers, ultrathin lms, nipis, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con ned structures aided by various other elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting applications in the realm of quantum e ect devices. In ultrathin lms, due to the reduction of symmetry in the wavevector space, the motion of the carriers in the direction normal to the lm becomes quantized leading to the quantum size e ect. Such systems nd extensive applications in quantum well lasers, eld e ect transistors, high speed digital networks and also in other low dimensional systems. In quantum wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed. The transport properties of charge carriers in quantum wires, which may be studied by utilizing the similarities with optical and microwave waveguides, are currently being investigated. Knowledge regarding these quantized structures may be gained from original research contributions in scienti c journals, proceedings of international conferences and various - view articles. Englisch, Ebook.
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Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De , edited by R. Hull, R. M. Osgood, J. Pa
Einstein Relation in Compound Semiconductors and their Nanostructures
DE NW EB DLISBN: 9783540795575 bzw. 354079557X, in Deutsch, Springer-Verlag, neu, E-Book, elektronischer Download.
Lieferung aus: Deutschland, E-Book zum Download.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
5
Einstein Relation in Compound Semiconductors and their Nanostructures (2009)
DE NWISBN: 9783540795575 bzw. 354079557X, in Deutsch, Springer, Berlin/Heidelberg, Deutschland, neu.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Versandkostenfrei.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
6
Einstein Relation in Compound Semiconductors and Their Nanostructures
EN NW EB DLISBN: 9783540795575 bzw. 354079557X, in Englisch, Springer Berlin Heidelberg, neu, E-Book, elektronischer Download.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Despatched same working day before 3pm.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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Einstein Relation in Compound Semiconductors and their Nanostructures als eBook von Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De, D. (2009)
DE NWISBN: 9783540795575 bzw. 354079557X, in Deutsch, Springer Berlin Heidelberg, neu.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Versandkostenfrei.
Einstein Relation in Compound Semiconductors and their Nanostructures ab 171.99 EURO Auflage 2009.
Einstein Relation in Compound Semiconductors and their Nanostructures ab 171.99 EURO Auflage 2009.
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