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1
Compact Transistor Modelling for Circuit Design (2012)
DE PB NW
ISBN: 9783709190456 bzw. 3709190452, in Deutsch, Springer-Verlag KG, Taschenbuch, neu.
Lieferung aus: Schweiz, Versandfertig innert 3 - 5 Werktagen.
Compact Transistor Modelling for Circuit Design, During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. Taschenbuch, 12.02.2012.
Compact Transistor Modelling for Circuit Design, During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. Taschenbuch, 12.02.2012.
2
Compact Transistor Modelling for Circuit Design (Computational Microelectronics) (2013)
EN PB US RP
ISBN: 9783709190456 bzw. 3709190452, in Englisch, 351 Seiten, Springer, Taschenbuch, gebraucht, Nachdruck.
جديد من: $76.19 (16 ويقدم)
تستخدم من: $76.55 (11 ويقدم)
إظهار المزيد 27 ويقدم في Amazon.com
Lieferung aus: Vereinigte Staaten von Amerika, Usually ships in 1-2 business days.
Von Händler/Antiquariat, allnewbooks.
During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. Paperback, الطبعة: Softcover reprint of the original 1st ed. 1990, التسمية: Springer, Springer, مجموعة المنتجات: Book, ونشرت: 2013-10-04, تاريخ الإصدار: 2013-10-04, ستوديو: Springer, رتبة المبيعات: 10422231.
Von Händler/Antiquariat, allnewbooks.
During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. Paperback, الطبعة: Softcover reprint of the original 1st ed. 1990, التسمية: Springer, Springer, مجموعة المنتجات: Book, ونشرت: 2013-10-04, تاريخ الإصدار: 2013-10-04, ستوديو: Springer, رتبة المبيعات: 10422231.
3
Compact Transistor Modelling for Circuit Design (Computational Microelectronics) (2012)
EN PB NW RP
ISBN: 9783709190456 bzw. 3709190452, in Englisch, 351 Seiten, Springer, Taschenbuch, neu, Nachdruck.
Neu ab: $83.21 (22 Angebote)
Gebraucht ab: $83.18 (9 Angebote)
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Lieferung aus: Vereinigte Staaten von Amerika, Usually ships in 4-5 business days, tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, allnewbooks.
During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. Paperback, Ausgabe: Softcover reprint of the original 1st ed. 1990, Label: Springer, Springer, Produktgruppe: Book, Publiziert: 2012-02-12, Freigegeben: 2013-10-04, Studio: Springer, Verkaufsrang: 1256301.
Von Händler/Antiquariat, allnewbooks.
During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. Paperback, Ausgabe: Softcover reprint of the original 1st ed. 1990, Label: Springer, Springer, Produktgruppe: Book, Publiziert: 2012-02-12, Freigegeben: 2013-10-04, Studio: Springer, Verkaufsrang: 1256301.
4
Compact Transistor Modelling for Circuit Design
DE PB NW
ISBN: 9783709190456 bzw. 3709190452, in Deutsch, Springer-Verlag KG, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Carl Hübscher GmbH, [4514147].
Neuware - During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. Taschenbuch, Neuware, 249x175x22 mm, 636g.
Von Händler/Antiquariat, Carl Hübscher GmbH, [4514147].
Neuware - During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. Taschenbuch, Neuware, 249x175x22 mm, 636g.
5
Compact Transistor Modelling for Circuit Design (2012)
~EN PB NW RP
ISBN: 9783709190456 bzw. 3709190452, vermutlich in Englisch, Springer Wien, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei in der BRD, sofort lieferbar.
Buch, Softcover, Softcover reprint of the original 1st ed. 1990.
Buch, Softcover, Softcover reprint of the original 1st ed. 1990.
6
Compact Transistor Modelling for Circuit Design 9783709190456, Paperback, NEW
DE PB NW
ISBN: 9783709190456 bzw. 3709190452, in Deutsch, Taschenbuch, neu.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, نوع التسليم: Free, التسليم: في جميع أنحاء العالم, موقع العرض: NR70WF Norwich,United Kingdom, الشحن المجاني.
Von Händler/Antiquariat, oodals.
سعر ثابت.
Von Händler/Antiquariat, oodals.
سعر ثابت.
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