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Process and Device Simulation for MOS-VLSI Circuits100%: Antognetti, P. (Herausgeber); Oldham, W. G. (Herausgeber); Dutton, Robert W. (Herausgeber); Antoniadis, D. A. (Herausgeber): Process and Device Simulation for MOS-VLSI Circuits (ISBN: 9789400968448) in Englisch, Taschenbuch.
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Process and Device Simulation for MOS-VLSI Circuits100%: P. Antognetti; D.A. Antoniadis; Robert W. Dutton; W.G. Oldham: Process and Device Simulation for MOS-VLSI Circuits (ISBN: 9789400968424) in Englisch, auch als eBook.
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Process and Device Simulation for MOS-VLSI Circuits (Nato Science Series E:)93%: Editor: P. Antognetti, Editor: D.A. Antoniadis, Editor: Robert W. Dutton, Editor: W.G. Oldham: Process and Device Simulation for MOS-VLSI Circuits (Nato Science Series E:) (ISBN: 9789024728244) 1983, Springer Shop, 1983. Ausgabe, in Englisch, Broschiert.
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Process and Device Simulation for MOS-VLSI Circuits
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9789400968448 - Springer: Process and Device Simulation for MOS-VLSI Circuits
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Process and Device Simulation for MOS-VLSI Circuits (2011)

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P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ- ent levels (government agencies, private industries, defense de- partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by... P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ- ent levels (government agencies, private industries, defense de- partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta- tistical fluctuations. Productinformatie:Soort: Met illustraties;Taal: Engels;Afmetingen: 32x234x156 mm;Gewicht: 961,00 gram;ISBN10: 9400968442;ISBN13: 9789400968448; Engels | Paperback | 2011.
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9789400968424 - P. Antognetti; D.A. Antoniadis; Robert W. Dutton; W.G. Oldham: Process and Device Simulation for MOS-VLSI Circuits
P. Antognetti; D.A. Antoniadis; Robert W. Dutton; W.G. Oldham

Process and Device Simulation for MOS-VLSI Circuits

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P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ­ ent levels (government agencies, private industries, defense de­ partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta­ tistical fluctuations. eBook.
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9789400968448 - P. Antognetti; D.A. Antoniadis; Robert W. Dutton; W.G. Oldham: Process and Device Simulation for MOS-VLSI Circuits
P. Antognetti; D.A. Antoniadis; Robert W. Dutton; W.G. Oldham

Process and Device Simulation for MOS-VLSI Circuits

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P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ­ ent levels (government agencies, private industries, defense de­ partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta­ tistical fluctuations. Soft cover.
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9789024728244 - P. Antognetti; D.A. Antoniadis; Robert W. Dutton; W.G. Oldham: Process and Device Simulation for MOS-VLSI Circuits
P. Antognetti; D.A. Antoniadis; Robert W. Dutton; W.G. Oldham

Process and Device Simulation for MOS-VLSI Circuits

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P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ­ ent levels (government agencies, private industries, defense de­ partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta­ tistical fluctuations. Hard cover.
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9789400968424 - P. Antognetti: Process and Device Simulation for MOS-VLSI Circuits
P. Antognetti

Process and Device Simulation for MOS-VLSI Circuits

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Process and Device Simulation for MOS-VLSI Circuits: P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ- ent levels (government agencies, private industries, defense de- partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta- tistical fluctuations. Englisch, Ebook.
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9789024728244 - Antognetti: / Antoniadis / Dutton / Oldham | Process and Device Simulation for MOS-VLSI Circuits | Springer | 1983
Antognetti

/ Antoniadis / Dutton / Oldham | Process and Device Simulation for MOS-VLSI Circuits | Springer | 1983

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P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ­ ent levels (government agencies, private industries, defense de­ partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta­ tistical fluctuations.
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9789400968448 - Editor: P. Antognetti: Process and Device Simulation for MOS-VLSI Circuits (Nato Science Series E:)
Editor: P. Antognetti

Process and Device Simulation for MOS-VLSI Circuits (Nato Science Series E:) (2013)

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P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ- ent levels (government agencies, private industries, defense de- partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta- tistical fluctuations. Paperback, Ausgabe: Softcover reprint of the original 1st ed. 1983, Label: Springer, Springer, Produktgruppe: Book, Publiziert: 2013-10-04, Freigegeben: 2013-10-04, Studio: Springer.
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9789400968448 - Editor: P. Antognetti: Process and Device Simulation for MOS-VLSI Circuits (Nato Science Series E:)
Editor: P. Antognetti

Process and Device Simulation for MOS-VLSI Circuits (Nato Science Series E:) (2013)

Lieferung erfolgt aus/von: Vereinigtes Königreich Großbritannien und Nordirland EN PB NW

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P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ- ent levels (government agencies, private industries, defense de- partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta- tistical fluctuations. Paperback, Ausgabe: Softcover reprint of the original 1st ed. 1983, Label: Springer, Springer, Produktgruppe: Book, Publiziert: 2013-10-04, Freigegeben: 2013-10-04, Studio: Springer.
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9789024728244 - Springer: Process and Device Simulation for Mos-VLSI Circuits
Springer

Process and Device Simulation for Mos-VLSI Circuits

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Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982, P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ­ ent levels (government agencies, private industries, defense de­ partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta­ tistical fluctuations.
10
9789024728244 - Editor: P. Antognetti, Editor: D.A. Antoniadis, Editor: Robert W. Dutton, Editor: W.G. Oldham: Process and Device Simulation for MOS-VLSI Circuits (Nato Science Series E:)
Editor: P. Antognetti, Editor: D.A. Antoniadis, Editor: Robert W. Dutton, Editor: W.G. Oldham

Process and Device Simulation for MOS-VLSI Circuits (Nato Science Series E:) (1983)

Lieferung erfolgt aus/von: Vereinigtes Königreich Großbritannien und Nordirland EN HC US

ISBN: 9789024728244 bzw. 902472824X, in Englisch, 636 Seiten, 1983. Ausgabe, Springer, gebundenes Buch, gebraucht.

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